電力電子裝置保護(hù)系統(tǒng)設(shè)計(jì)

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摘要: 在電力電子保護(hù)中，除了電力電子參數(shù)選擇合適，驅(qū)動(dòng)電路設(shè)計(jì)良好外，還必須采用合適的電路保護(hù)。近年來，隨著我國(guó)電力電子基礎(chǔ)技術(shù)的飛速發(fā)展，國(guó)家把淘汰低效高耗能產(chǎn)業(yè)列入了國(guó)民經(jīng)濟(jì)的發(fā)展戰(zhàn)略，要求電力電子裝置的輸出性能越來越高，對(duì)保護(hù)的要求越來越高，對(duì)網(wǎng)側(cè)電能質(zhì)量影響愈發(fā)嚴(yán)格。為了保證系統(tǒng)運(yùn)行的安全性和經(jīng)濟(jì)性，電力電子設(shè)備的保護(hù)已成為當(dāng)前電力電子系統(tǒng)中迫切需要解決的問題。
絕緣柵極雙極型晶體管(IGBT)是一種復(fù)合型器件，是新型電力電子器件的主流器件，對(duì)IGBT的驅(qū)動(dòng)保護(hù)，使之可以安全可靠的運(yùn)行來提高生產(chǎn)效率和經(jīng)濟(jì)效益及保證安全生產(chǎn)有重要意義。
EXB841和M57959L驅(qū)動(dòng)芯片在國(guó)內(nèi)使用較為廣泛，本文選取這兩種驅(qū)動(dòng)芯片，對(duì)其工作原理進(jìn)行了分析，并從性能上做了。選取M57959L作為驅(qū)動(dòng)電路核心芯片，設(shè)計(jì)出一種應(yīng)用電路。驅(qū)動(dòng)電路主要應(yīng)用光耦P521提高芯片M57959L的快速反應(yīng)能力，同時(shí)選擇以高速光耦6N137為IGBT的隔離電路，利用6N137具有溫度、電流和電壓補(bǔ)償?shù)墓δ軄泶_保IGBT可靠安全工作的。針對(duì)M57959L的工作特性，以及IGBT保護(hù)特性，選擇合適的器件以及參數(shù)。通過分析實(shí)驗(yàn)波形，M57959L驅(qū)動(dòng)應(yīng)用電路可以有效的消除減少外加電源對(duì)驅(qū)動(dòng)電路的干擾，同時(shí)電路短路時(shí)有效的保護(hù)IGBT。
關(guān)鍵詞：IGBT 驅(qū)動(dòng)電路 過流保護(hù) EXB841 M57959L 隔離電路

Design of Protection System of Power Electronic Devices
ABSTRACT: In power electronics protection, not only to select the appropriate power electronic parameters and a good driver circuit design, but also the appropriate circuit protection must be used. In recent years, with the rapid development of power electronics-based technologies,country included phasing out inefficient high energy-consuming in the development strategy of the national economy. The requirement of performance of output power electronic devices become more sophisticated and the protection of the increasingly high demand. In addition to these,the impact on the network side of power quality has also became more stringent. In order to ensure the safety of the system is running and economy, protection of power electronic devices has become an urgent problems needing to solve problems in power electronics.
Insulated gate bipolar transistor (IGBT) is a composite device, which is the mainstream of new power electronic devices.The protection of IGBT is to make it safe and reliable operation to improve productivity and ensure safety in production and economic significance.
EXB841 and M57959L driver chips are widely used in our country.This paper selects two driver chips, analyzing its operating principle and doing a simple comparison from the performance.Also, selecting M57959L as a driver circuit core chip and designing an application circuit.Driver circuit applys P521 optocoupler to improve the rapid response capabilities, as well as selecting high-speed optocoupler 6N137 as the isolation circuit for the IGBT. Using 6N137 with temperature, current and voltage compensation feature to ensure that IGBT can work safe and reliable. For operating characteristics M57959L and IGBT protection features, selecting appropriate devices and parameters. By analyzing the experimental waveforms, M57959L driver application circuit can effectively reduce the interference of external power supply to the drive circuit, effectively protect the IGBT when a short circuit at the same time.
Key word：IGBT driving circuit overcurrent protection EXB841 M57959L Isolation circuit

目 錄
第一章IGBT驅(qū)動(dòng)技術(shù)現(xiàn)狀和保護(hù)以及驅(qū)動(dòng)電路的要求 1
1.1 IGBT驅(qū)動(dòng)技術(shù)現(xiàn)狀 1
1.1.1 光耦合器 1
1.1.2 用脈沖變壓器隔離驅(qū)動(dòng)IGBT的三種方法 1
1.1.3 當(dāng)前市場(chǎng)上的直接驅(qū)動(dòng)和隔離驅(qū)動(dòng) 2
1.2 IGBT的保護(hù) 3
1.2.1 過電流和短路保護(hù) 3
1.2.2 dv/dt保護(hù) 4
1.2.3 過熱保護(hù) 5
1.3 IGBT驅(qū)動(dòng)電路的要求 5
1.4本文主要工作 6
第二章 驅(qū)動(dòng)芯片EXB841的原理分析和優(yōu)化 7
2.1 EXB841的拓?fù)浣Y(jié)構(gòu) 7
2.2 EXB841的工作原理 8
2.3 EXB841存在的不足 10
2.4 解決EXB841不足之處的措施 11
2.5 本章小節(jié) 12
第三章 驅(qū)動(dòng)芯片M57959L的原理分析和應(yīng)用電路的設(shè)計(jì) 13
3.1 M57959L的拓?fù)浣Y(jié)構(gòu) 13
3.2 M57959L的工作原理 15
3.3 M5795L應(yīng)用電路設(shè)計(jì)要求 15
3.4 驅(qū)動(dòng)電路的總體設(shè)計(jì) 16
3.4.1 實(shí)驗(yàn)條件選擇 17
3.5 IGBT的隔離電路原理圖 17
3.6 以M57959L芯片為主的主驅(qū)動(dòng)電路設(shè)計(jì) 20
3.6.1 元器件選擇以及參數(shù)計(jì)算 21
3.7 實(shí)驗(yàn)結(jié)果分析 22
3.7.1 實(shí)驗(yàn)裝置 22
3.7.2 實(shí)驗(yàn)波形分析 23
3.8 本章小結(jié) 27
第四章　總結(jié)與展望 28
4.1 研究總結(jié) 28
4.2 研究展望 28
致謝 30
參考文獻(xiàn) 31